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While most people will know Samsung from its phones and tablets, there’s a lot more to the South Korean tech giant than its smart devices. That being said, Samsung recently announced it has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND).
Samsung says that it plans to expand applications of the QLC 9th-generation V-NAND through branded consumer products and eventually extending into mobile Universal Flash Storage (UFS), as well as PCs and server SSDs for both private and enterprise cloud solutions.
Samsung says that it has developed the QLC 9th-Gen V-NAND using a variety of its signature processes, including its Channel Hole Etching technology to achieve the highest layer count in the industry, Designed Mold technology that adjusts the spacing of Word Lines, and Predictive Program technology that anticipates and controls cell state changes to minimize unnecessary actions. Samsung claims that the QLC 9th-generation V-NAND has doubled write performance and improved data input/output speed by 60% through advancements as a result.
SungHoi Hur, Executive Vice President and Head of Flash Product & Technology at Samsung comments:
Kicking off the successful mass production of QLC 9th-generation V-NAND just four months after the TLC version allows us to offer a full lineup of advanced SSD solutions that address the needs for the AI era… As the enterprise SSD market shows rapid growth with stronger demand for AI applications, we will continue to solidify our leadership in the segment through our QLC and TLC 9th-generation V-NAND.
Source: Samsung
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